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Preliminary Datasheet
RJK6024DPD
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting REJ03G1936-0100 Rev.1.00 Jun 01, 2010
Outline
RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A)
4 1. 2. 3. 4. Gate Drain Source Drain
D
G
12
3
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IDR(pulse)Note1 Pch Note2 ch-c Tch Tstg Ratings 600 30 0.4 0.6 0.4 0.6 27.2 4.58 150 -55 to +150 Unit V V A A A A W C/W C C
REJ03G1936-0100 Rev.1.00 Jun 01, 2010
Page 1 of 6
RJK6024DPD
Preliminary
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600 -- -- 3 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 28 37.5 7.5 0.9 30 14.5 48 77 4.3 0.5 3.2 0.85 230 Max -- 1 0.1 5 42 -- -- -- -- -- -- -- -- -- -- 1.45 -- Unit V A A V pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 0.2 A, VGS = 10 V Note3 VDS = 25 V VGS = 0 f = 1 MHz ID = 0.2 A VGS = 10 V RL = 1500 Rg = 10 VDD = 480 V VGS = 10 V ID = 0.15 A IF = 0.4 A, VGS = 0 Note3 IF = 0.4 A, VGS = 0 diF/dt = 100 A/s
REJ03G1936-0100 Rev.1.00 Jun 01, 2010
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RJK6024DPD
Preliminary
Main Characteristics
Maximum Safe Operation Area
10 0.6 0.5 0.4 0.3 5.4 V 0.2 0.1 0 Ta = 25C Pulse Test 5.8 V 6V 8V
Typical Output Characteristics
Drain Current ID (A)
PW
0.1
10
s
=
Drain Current ID (A)
1
10
0
10 V
s
5.6 V
0.01
0.001
Operation in this area is limited by RDS(on) Tc = 25C 1 shot 1 10 100 1000
5.2 V VGS = 5 V
0.0001 0.1
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical)
Drain to Source on State Resistance RDS(on) ()
1000 VGS = 10 V Ta = 25C Pulse Test
Typical Transfer Characteristics
1 VDS = 10 V Pulse Test Tc = -25C
Drain Current ID (A)
25C 0.1
75C
100
0.01 0 2 4 6 8 10
10 0.01
0.1
1
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature (Typical)
80 VGS = 10 V Pulse Test 60 ID = 0.4 A 40 0.2 A 0.1 A 20 1000
Drain Current ID (A)
Static Drain to Source on State Resistance RDS(on) ()
Body-Drain Diode Reverse Recovery Time (Typical)
Reverse Recovery Time trr (ns)
100
di / dt = 50 A / s VGS = 0, Ta = 25C 10 0.1 1 10
0 -25
0
25
50
75
100 125 150
Case Temperature Tc (C)
Reverse Drain Current IDR (A)
REJ03G1936-0100 Rev.1.00 Jun 01, 2010
Page 3 of 6
RJK6024DPD
Typical Capacitance vs. Drain to Source Voltage (Typical)
Drain to Source Voltage VDS (V)
100 Ciss
Preliminary
Dynamic Input Characteristics (Typical)
VGS
600 VDS 400
10 Coss
VDD = 480 V 300 V 100 V
12
8
1 VGS = 0 f = 1 MHz Ta = 25C 50 100 150 200
Crss
200
VDD = 480 V 300 V 100 V 2 4 6 8
4
0.1 0
250
300
0 0
0 10
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage VGS(off) (V)
Reverse Drain Current vs. Source to Drain Voltage (Typical)
0.6
Gate to Source Cutoff Voltage vs. Case Temperature (Typical)
5.0 VDS = 10 V 4.5 4.0 3.5 3.0 0.1 mA 2.5 2.0 -25
Reverse Drain Current IDR (A)
0.5 0.4 0.3 0.2 0.1 0 0
VGS = 0 V Ta = 25 C Pulse Test
ID = 10 mA 1 mA
0.4
0.8
1.2
1.6
0
25
50
75
100 125 150
Source to Drain Voltage VSD (V)
Case Temperature
Tc (C)
REJ03G1936-0100 Rev.1.00 Jun 01, 2010
Page 4 of 6
Gate to Source Voltage VGS (V)
800
ID = 0.4 A Ta = 25 C
16
Capacitance C (pF)
RJK6024DPD
Transient Thermal Impedance vs. Pulse Width
Transient Thermal Impedance ch-c (C/W)
100 TC = 25C
Preliminary
10
Single
1
pulse
0.1 0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor D.U.T. RL 10 Vin 10 V VDD = 300 V Vin Vout 10% 10% Vout Monitor
Waveform
90%
10%
90% td(on) tr
90% td(off) tf
REJ03G1936-0100 Rev.1.00 Jun 01, 2010
Page 5 of 6
RJK6024DPD
Preliminary
Package Dimensions
Package Name MP-3A JEITA Package Code SC-63 RENESAS Code PRSS0004ZG-A Previous Code TMP3 MASS[Typ.] 0.32g
Unit: mm
1 0.2
6.6 5.3 0.2
2.3 0.5 0.2
6.1 0.2
10.4Max
0.1 0.1
1Max
2.5Min
0.76 0.2
0.76
0.5 0.2 2.3 0.2
2.3
Ordering Information
Part No. RJK6024DPD-00-J2 Quantity 3000 pcs Taping Shipping Container
REJ03G1936-0100 Rev.1.00 Jun 01, 2010
1
1.4 0.2
Page 6 of 6
Notice
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